Dimension
Material Properties
| Item | Specification | Testing method |
|---|---|---|
| Growth mode | CZ | / |
| Crystal orientation | ＜100＞±3° | X-ray diffraction method |
| Conductivity type | N type | P/N tester |
| Dislocation density/cm? | ≤500 | X-ray diffractometer (ASTM F26-1987) |
| Item | Growth mode | |
| Specification | CZ | |
| Testing method | / | |
| Item | Crystal orientation | |
| Specification | ＜100＞±3° | |
| Testing method | X-ray diffraction method | |
| Item | Conductivity type | |
| Specification | N type | |
| Testing method | P/N tester | |
| Item | Dislocation density/cm? | |
| Specification | ≤500 | |
| Testing method | X-ray diffractometer (ASTM F26-1987) |
Electrical Properties
| Item | Specification | Testing method |
|---|---|---|
| Oxygen content | ≤6.0×1017atoms/cm3 | Fourier transform infrared spectrometer |
| Carbon content | ≤0.5×1017atoms/cm3 | Fourier transform infrared spectrometer |
| Resistivity | 0.3-2.1Ω.cm | Automatic silicon wafer detection equipment |
| Minority carrier lifetime | ≥1000us | Sinton BCT-400 QSSPC quasi-steady-state photoconductance decay method, Transient photoconductance decay method (with injection level: 1E15 cm-3) |
| Item | Oxygen content | |
| Specification | ≤6.0×1017atoms/cm3 | |
| Testing method | Fourier transform infrared spectrometer | |
| Item | Carbon content | |
| Specification | ≤0.5×1017atoms/cm3 | |
| Testing method | Fourier transform infrared spectrometer | |
| Item | Resistivity | |
| Specification | 0.3-2.1Ω.cm | |
| Testing method | Automatic silicon wafer detection equipment | |
| Item | Minority carrier lifetime | |
| Specification | ≥1000us | |
| Testing method | Sinton BCT-400 QSSPC quasi-steady-state photoconductance decay method, Transient photoconductance decay method (with injection level: 1E15 cm-3) |
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